| PART |
Description |
Maker |
| CXK77910AYM CXK77910ATM CXK77910ATM_AYM CXK77910AT |
128K X 9 STANDARD SRAM, 6.5 ns, PDSO44
131,072-word by 9-bit High-Speed Synchronous Static RAM
From old datasheet system
|
Sony
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100
Replaced by PTH12000W :
|
MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| A63L7332 A63L7332E-42 A63L7332E-45 A63L7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
4.2ns 128K x 32bit synchronous high speed SRAM
4.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology Corporation
|
| MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MR27V1652D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块)
16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
|
Toshiba Corporation
|
| AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100
128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100
LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| MC-454AD646 MC-454CB645LFA-A10B MC-454CB645 MC-454 |
4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
4M-word by 64-Bit SDRAM Module
|
NEC Electronics
NEC Corp.
|
| UPD431000AGZ-B15-KKH UPD431000AGZ-85L-KJH UPD43100 |
1M-bit(128K-word x 8-bit) Low power SRAM
|
NEC
|
| UPD442012AGY-DD10X-MJH UPD442012AGY-DD12X-MJH UPD4 |
2M-bit(128K-word x 16-bit) Low Power SRAM
|
NEC
|
